Ion-induced damage and annealing of silicon. Molecular dynamics simulations*
David Humbird and David B. Graves
University of California at Berkeley, Berkeley, CA
94720, USA
Abstract: A study of the interactions of energetic argon ions
with silicon surfaces using molecular dynamics simulations is reported.
A dynamic balance between ion-induced damage and recrystallization of
the surface is detected. By manipulating ion energy, argon ions are
able to both create disordered regions near the surface, and recrystallize
these disordered regions.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317–492.
** Corresponding author.
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